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・ Robert W. Rosenthal
・ Robert W. Russell
・ Robert W. Saunders, Sr. Public Library
・ Robert W. Scales
・ Robert W. Schroeder III
・ Robert W. Scott
・ Robert W. Aschenbrener
・ Robert W. B. Elliott
・ Robert W. Baird
・ Robert W. Baird & Co.
・ Robert W. Bates
・ Robert W. Bazley
・ Robert W. Bly
・ Robert W. Bogle
・ Robert W. Bonynge
Robert W. Bower
・ Robert W. Boyd
・ Robert W. Brodersen
・ Robert W. Brooks
・ Robert W. Brown
・ Robert W. Bussard
・ Robert W. Cahn
・ Robert W. Camac
・ Robert W. Campbell Award
・ Robert W. Castle
・ Robert W. Chambers
・ Robert W. Chandler
・ Robert W. Clarke Trophy
・ Robert W. Clifford
・ Robert W. Clower


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Robert W. Bower : ウィキペディア英語版
Robert W. Bower

Dr. Robert W. Bower (June 12, 1936) was born in Santa Monica, CA and is an applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Department Head at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California. He has also published over 80 journals and articles, patented over 28 inventions, and authored chapters in 3 different books.
==Biography==


抄文引用元・出典: フリー百科事典『 ウィキペディア(Wikipedia)
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